Invention Grant
- Patent Title: Temperature control method, memory storage device and memory control circuit unit
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Application No.: US15788809Application Date: 2017-10-20
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Publication No.: US11086564B2Publication Date: 2021-08-10
- Inventor: Shao-Hsien Liu
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: JCIPRNET
- Priority: TW106127162 20170810
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F11/30 ; G06F1/20 ; G06F12/02

Abstract:
A temperature control method is provided according to an exemplary embodiment of the invention. The method includes: sensing a temperature by a temperature sensor and obtaining a temperature value; performing a cooling-down operation based on a first cooling-down level and updating a level parameter to a first level parameter if the temperature value reaches a first threshold value; and performing the cooling-down operation based on a second cooling-down level according to the first level parameter and updating the level parameter to a second level parameter if the temperature value is not less than the first threshold value during a first time range after the cooling-down operation based on the first cooling-down level is performed, and a cooling-down ability of the cooling-down operation performed based on the second cooling-down level is higher than a cooling-down ability of the cooling-down operation performed based on the first cooling-down level.
Public/Granted literature
- US20190050166A1 TEMPERATURE CONTROL METHOD, MEMORY STORAGE DEVICE AND MEMORY CONTROL CIRCUIT UNIT Public/Granted day:2019-02-14
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