Invention Grant
- Patent Title: Stress induction in 3D device channel using elastic relaxation of high stress material
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Application No.: US16671724Application Date: 2019-11-01
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Publication No.: US11094823B2Publication Date: 2021-08-17
- Inventor: Kangguo Cheng , Nicolas J. Loubet , Xin Miao , Alexander Reznicek
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Erik Johnson
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L21/306 ; H01L29/66 ; H01L29/08 ; H01L29/775 ; B82Y10/00 ; H01L29/10
Abstract:
A method for inducing stress in a device channel includes forming a stress adjustment layer on a substrate, the stress adjustment layer including an as deposited stress due to crystal lattice differences with the substrate. A device channel layer is formed on the stress adjustment layer. Cuts are etched through the device channel layer and the stress adjustment layer to release the stress adjustment layer to induce stress in the device channel layer. Source/drain regions are formed adjacent to the device channel layer.
Public/Granted literature
- US20200066910A1 STRESS INDUCTION IN 3D DEVICE CHANNEL USING ELASTIC RELAXATION OF HIGH STRESS MATERIAL Public/Granted day:2020-02-27
Information query
IPC分类:
