Invention Grant
- Patent Title: Stacked nanosheets with self-aligned inner spacers and metallic source/drain
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Application No.: US16445308Application Date: 2019-06-19
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Publication No.: US11121232B2Publication Date: 2021-09-14
- Inventor: Choonghyun Lee , Kangguo Cheng , Juntao Li
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Erik Johnson
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/28 ; H01L29/78 ; H01L29/16 ; H01L29/06 ; H01L21/285 ; H01L21/306 ; H01L21/311 ; H01L21/02
Abstract:
Semiconductor devices include vertically stacked channel layers formed from a semiconductor material. A metallic interface layer is formed between metal source/drain regions and the vertically stacked channel layers. The metallic interface layer includes the semiconductor material and a metal. A gate stack is formed between and around the channel layers.
Information query
IPC分类:
