Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16028992Application Date: 2018-07-06
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Publication No.: US11127732B2Publication Date: 2021-09-21
- Inventor: Yoshiaki Oikawa , Shingo Eguchi
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Husch Blackwell LLP
- Priority: JP2008-239075 20080918,JP2008-239078 20080918
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/12 ; H01L27/13 ; H01L23/66

Abstract:
To solve a problem in that an antenna or a circuit including a thin film transistor is damaged due to discharge of electric charge accumulated in an insulator (a problem of electrostatic discharge), a semiconductor device includes a first insulator, a circuit including a thin film transistor provided over the first insulator, an antenna which is provided over the circuit and is electrically connected to the circuit, and a second insulator provided over the antenna, a first conductive film provided between the first insulator and the circuit, and a second conductive film provided between the second insulator and the antenna.
Public/Granted literature
- US20180315745A1 Semiconductor Device Public/Granted day:2018-11-01
Information query
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