Invention Grant
- Patent Title: Gas cluster ion beam apparatus and analyzing apparatus
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Application No.: US16831082Application Date: 2020-03-26
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Publication No.: US11145484B2Publication Date: 2021-10-12
- Inventor: Mauo Sogou , Hiromichi Yamazui , Daisuke Sakai , Katsumi Watanabe
- Applicant: ULVAC-PHI, INC
- Applicant Address: JP Chigasaki
- Assignee: ULVAC-PHI, INC
- Current Assignee: ULVAC-PHI, INC
- Current Assignee Address: JP Chigasaki
- Agency: Oliff PLC
- Priority: JPJP2019-061228 20190327
- Main IPC: H01J37/08
- IPC: H01J37/08

Abstract:
An analyzing apparatus includes a sample chamber, a measurement apparatus, and a gas cluster ion beam apparatus. A cooling body separates an ionization chamber of the gas cluster ion beam apparatus from a nozzle support to prevent heat emitted by an ionization filament from being transmitted to the nozzle support, and a temperature of a source gas emitted from a nozzle is kept at a constant temperature by a gas heating device while a sputtering rate is kept constant. A pressure of the source gas supplied to the nozzle is kept at constant pressure by a pressure controller, and a size of gas cluster ions is kept at a constant value. Because the sputtering rate is a constant value, highly accurate depth surface profiling can be performed.
Public/Granted literature
- US20200312604A1 GAS CLUSTER ION BEAM APPARATUS AND ANALYZING APPARATUS Public/Granted day:2020-10-01
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