Invention Grant
- Patent Title: Enhancement/depletion device pairs and methods of producing the same
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Application No.: US16489847Application Date: 2017-03-31
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Publication No.: US11145648B2Publication Date: 2021-10-12
- Inventor: Sansaptak Dasgupta , Han Wui Then , Marko Radosavljevic , Paul B. Fischer
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Green, Howard & Mughal LLP
- International Application: PCT/US2017/025457 WO 20170331
- International Announcement: WO2018/182704 WO 20181004
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L27/085 ; H01L29/20 ; H01L29/66 ; H01L29/778 ; H01L29/739 ; H01L21/8252 ; H01L29/205
Abstract:
Enhancement/depletion device pairs and methods of producing the same are disclosed. A disclosed example multilayered die includes a depletion mode device that includes a first polarization layer and a voltage tuning layer, and an enhancement mode device adjacent the depletion mode device, where the enhancement mode device includes a second polarization layer, and where the second polarization layer includes an opening corresponding to a gate of the enhancement mode device.
Public/Granted literature
- US20200043917A1 ENHANCEMENT/DEPLETION DEVICE PAIRS AND METHODS OF PRODUCING THE SAME Public/Granted day:2020-02-06
Information query
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