Invention Grant
- Patent Title: Light-absorbing mask for hybrid laser scribing and plasma etch wafer singulation process
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Application No.: US15606456Application Date: 2017-05-26
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Publication No.: US11158540B2Publication Date: 2021-10-26
- Inventor: Wenguang Li , James S. Papanu , Wei-Sheng Lei , Prabhat Kumar , Brad Eaton , Ajay Kumar , Alexander N. Lerner
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/311 ; H01L21/02 ; H01L21/268 ; H01L21/3065 ; H01L21/308

Abstract:
Light-absorbing masks and methods of dicing semiconductor wafers are described. In an example, a method of dicing a semiconductor wafer including a plurality of integrated circuits involves forming a mask above the semiconductor wafer. The mask includes a water-soluble matrix based on a solid component and water, and a light-absorber species throughout the water-soluble matrix. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask with gaps and corresponding trenches in the semiconductor wafer in regions between the integrated circuits. The semiconductor wafer is plasma etched through the gaps in the patterned mask to extend the trenches and to singulate the integrated circuits. The patterned mask protects the integrated circuits during the plasma etching.
Public/Granted literature
- US20180342422A1 LIGHT-ABSORBING MASK FOR HYBRID LASER SCRIBING AND PLASMA ETCH WAFER SINGULATION PROCESS Public/Granted day:2018-11-29
Information query
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