Invention Grant
- Patent Title: 1S-1C DRAM with a non-volatile CBRAM element
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Application No.: US16636904Application Date: 2017-09-29
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Publication No.: US11195578B2Publication Date: 2021-12-07
- Inventor: Ravi Pillarisetty , Abhishek A. Sharma , Brian S. Doyle , Elijah V. Karpov , Prashant Majhi
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- International Application: PCT/US2017/054597 WO 20170929
- International Announcement: WO2019/066964 WO 20190404
- Main IPC: G11C13/00
- IPC: G11C13/00 ; H01L27/24
Abstract:
One embodiment of a memory device comprises a selector and a storage capacitor in series with the selector. A further embodiment comprises a conductive bridging RAM (CBRAM) in parallel with a storage capacitor coupled between the selector and zero volts. A plurality of memory devices form a 1S-1C or a 1S-1C-CBRAM cross-point DRAM array with 4F2 or less density.
Public/Granted literature
- US20200168274A1 1S-1C DRAM WITH A NON-VOLATILE CBRAM ELEMENT Public/Granted day:2020-05-28
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