Invention Grant
- Patent Title: 2S-1C 4F2 cross-point DRAM array
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Application No.: US16635966Application Date: 2017-09-29
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Publication No.: US11195839B2Publication Date: 2021-12-07
- Inventor: Ravi Pillarisetty , Abhishek A. Sharma , Prashant Majhi , Elijah V. Karpov , Brian S. Doyle
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- International Application: PCT/US2017/054276 WO 20170929
- International Announcement: WO2019/066893 WO 20190404
- Main IPC: H01L27/108
- IPC: H01L27/108 ; G11C11/4096 ; G11C14/00
Abstract:
A memory device comprises a first selector and a storage capacitor in series with the first selector. A second selector is in parallel with the storage capacitor coupled between the first selector and zero volts. A plurality of memory devices form a 2S-1C cross-point DRAM array with 4F2 or less density.
Public/Granted literature
- US20200243543A1 2S-1C 4F2 CROSS-POINT DRAM ARRAY Public/Granted day:2020-07-30
Information query
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