A semiconductor storage apparatus capable of realizing continuous read with high speed is provided. A continuous read method of a NAND flash memory includes: a step for holding setting information related to a read time of a memory cell array in continuous read in a register; a step for reading data from the memory cell array in the read time based on the setting information; a step for holding the read data in a latch (L1) and a latch (L2); and a step for outputting the data held synchronously with an external clock signal corresponding to the setting information.