Invention Grant
- Patent Title: Crystal control and stability for high-performance perovskite solar cell
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Application No.: US14676828Application Date: 2015-04-02
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Publication No.: US11217751B2Publication Date: 2022-01-04
- Inventor: Wallace Woon-Fong Leung , Jingchuan Wang , Lijun Yang
- Applicant: The Hong Kong Polytechnic University
- Applicant Address: HK Hong Kong
- Assignee: The Hong Kong Polytechnic University
- Current Assignee: The Hong Kong Polytechnic University
- Current Assignee Address: HK Hong Kong
- Agency: Spruson & Ferguson (Hong Kong) Limited
- Main IPC: H01L31/032
- IPC: H01L31/032 ; B05D1/18 ; B05D1/00 ; H01L51/00 ; H01L51/42

Abstract:
PbI2 thin film crystallization control is prerequisite of high-quality perovskite layer for the sequentially solution-processed perovskite solar cells. According to the present invention, an efficient-and-simple method has been developed by adding halogen acid additive to improve perovskite thin-film quality and an efficiency of at least 15.2% is obtained. This approach improves coverage, uniformity and stability of pervoskite thin-film. In addition, a nanofiber scaffold is incorporated into the perovskite layer so as to reduce the amount of grain boundaries, thus substantially reducing electron recombination within these boundaries.
Public/Granted literature
- US20150287852A1 Crystal Control and Stability for High-Performance Perovskite Solar Cell Public/Granted day:2015-10-08
Information query
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