Invention Grant
- Patent Title: Complementary pattern station designs
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Application No.: US16658396Application Date: 2019-10-21
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Publication No.: US11220747B2Publication Date: 2022-01-11
- Inventor: Joseph AuBuchon , Sanjeev Baluja , Michael Rice , Arkaprava Dan , Hanhong Chen
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: C23C16/458
- IPC: C23C16/458 ; C23C16/455 ; C23C16/46 ; H01L21/02 ; H01L21/687 ; H01J37/32 ; H01L21/67 ; H01L21/677
Abstract:
Apparatus and methods to process one or more wafers are described. A first processing station has a first gas flow pattern from one or more of a first gas diffuser, a first cooling channel pattern, or a first heater. A second processing station has a second gas flow pattern from one or more of a second gas diffuser, a second cooling channel pattern, or a second heater. The second gas diffuser, the second cooling channel pattern, or the second heater is rotated or translated relative to the first gas diffuser, the first cooling channel pattern, or the first heater to provide the second gas flow pattern complementary to the first gas flow pattern.
Information query
IPC分类:
