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公开(公告)号：US20250163578A1
公开(公告)日：2025-05-22
申请号：US18627046
申请日：2024-04-04
Applicant: Applied Materials, Inc.
Inventor： Hanhong Chen , Kenneth Brian Doering , Sanjeev Baluja , Chi-Chou Lin , Kevin Griffin , Joseph AuBuchon , Zhejun Zhang , Rohit Ode , Tejas Umesh Ulavi
IPC: C23C16/455 , H01J37/32
Abstract: Plasma showerhead assemblies are disclosed comprising a conductive plate having a plurality of the conductive plate openings, a dielectric faceplate having a thickness and a plurality of dielectric faceplate gas openings extending through the dielectric faceplate thickness in fluid communication with the plurality of the conductive plate gas openings. A conductive insert is disposed within at least one of the dielectric faceplate gas openings or adjacent o-rings included in the plasma showerhead assemblies.
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公开(公告)号：US12119221B2
公开(公告)日：2024-10-15
申请号：US18125509
申请日：2023-03-23
Applicant: Applied Materials, Inc.
Inventor： Hanhong Chen , Philip A. Kraus , Joseph AuBuchon
IPC: H01L21/02 , C23C16/34 , C23C16/455
CPC classification number: H01L21/0228 , C23C16/34 , C23C16/45542 , H01L21/0217 , H01L21/02186 , H01L21/02205 , H01L21/02211 , H01L21/02274
Abstract: A method of depositing nitride films is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing nitride films which utilizes separate reaction and nitridation plasmas. In some embodiments, the nitride films have improved growth per cycle (GPC) relative to films deposited by thermal processes or plasma processes with only a single plasma exposure. In some embodiments, the nitride films have improved film quality relative to films deposited by thermal processes or plasma processes with only a single plasma exposure.
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公开(公告)号：US11823870B2
公开(公告)日：2023-11-21
申请号：US16990306
申请日：2020-08-11
Applicant: Applied Materials, Inc.
Inventor： Hanhong Chen , Arkaprava Dan , Joseph AuBuchon , Kyoung Ha Kim , Philip A. Kraus
IPC: H01L21/285 , H01J37/32 , C23C16/34 , H01L21/768 , C23C16/511
CPC classification number: H01J37/32201 , C23C16/34 , C23C16/511 , H01L21/28568 , H01L21/76841 , H01J2237/3321
Abstract: A method of depositing titanium nitride is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing titanium nitride which utilizes a direct microwave plasma. In some embodiments, the direct microwave plasma has a high plasma density and low ion energy. In some embodiments, the plasma is generated directly above the substrate surface.
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公开(公告)号：US11586789B2
公开(公告)日：2023-02-21
申请号：US17224545
申请日：2021-04-07
Applicant: Applied Materials, Inc.
Inventor： Dhritiman Subha Kashyap , Chaowei Wang , Kartik Shah , Kevin Griffin , Karthik Ramanathan , Hanhong Chen , Joseph AuBuchon , Sanjeev Baluja
Abstract: Methods, software systems and processes to develop surrogate model-based optimizers for controlling and optimizing flow and pressure of purges between a showerhead and a heater having a substrate support to control non-uniformity inherent in a processing chamber due to geometric configuration and process regimes. The flow optimizer process utilizes experimental data from optimal process space coverage models, generated simulation data and statistical machine learning tools (i.e. regression models and global optimizers) to predict optimal flow rates for any user-specified process regime.
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公开(公告)号：US11110425B2
公开(公告)日：2021-09-07
申请号：US16523252
申请日：2019-07-26
Applicant: Applied Materials, Inc.
Inventor： Jared Ahmad Lee , Sanjeev Baluja , Joseph AuBuchon , Dhritiman Subha Kashyap , Michael Rice
Abstract: Apparatus and methods for providing high velocity gas flow showerheads for deposition chambers are described. The showerhead has a faceplate in contact with a backing plate that has a concave portion to provide a plenum between the backing plate and the faceplate. A plurality of thermal elements is within the concave portion of the backing plate and extends to contact the faceplate.
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Patent Agency Ranking
公开(公告)号：US20210087681A1
公开(公告)日：2021-03-25
申请号：US17025025
申请日：2020-09-18
Applicant: Applied Materials, Inc.
Inventor： Joseph AuBuchon , Sanjeev Baluja , Michael Rice , Arkaprava Dan , Hanhong Chen
IPC: C23C16/458 , C23C16/52 , C23C16/455
Abstract: Apparatus and methods to process one or more substrates are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition. The support assembly configured to offset the position of the substrate with respect to the processing stations.
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公开(公告)号：US12077861B2
公开(公告)日：2024-09-03
申请号：US17025025
申请日：2020-09-18
Applicant: Applied Materials, Inc.
Inventor： Joseph AuBuchon , Sanjeev Baluja , Michael Rice , Arkaprava Dan , Hanhong Chen
IPC: C23C16/458 , C23C16/455 , C23C16/52
CPC classification number: C23C16/4584 , C23C16/45544 , C23C16/52
Abstract: Apparatus and methods to process one or more substrates are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition. The support assembly configured to offset the position of the substrate with respect to the processing stations.
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公开(公告)号：US11894257B2
公开(公告)日：2024-02-06
申请号：US16171785
申请日：2018-10-26
Applicant: Applied Materials, Inc.
Inventor： Michael Rice , Joseph AuBuchon , Sanjeev Baluja , Mandyam Sriram
IPC: H01L21/68 , H01L21/687 , C23C16/44 , C23C16/458 , H01L21/67 , C23C16/46 , H01L21/683 , C23C16/455
CPC classification number: H01L21/68785 , C23C16/4409 , C23C16/4584 , C23C16/45525 , C23C16/46 , H01L21/6719 , H01L21/67103 , H01L21/67248 , H01L21/6831 , H01L21/6833 , H01L21/68764 , H01L21/68771
Abstract: Apparatus and methods to process one or more wafers are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition.
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公开(公告)号：US20230123038A1
公开(公告)日：2023-04-20
申请号：US17503599
申请日：2021-10-18
Applicant: Applied Materials, Inc.
Inventor： Joseph AuBuchon
IPC: H01L21/02 , H01L21/311 , H01J37/32
Abstract: Embodiments of the disclosure include methods of forming a film comprising conformally depositing a first film on a substrate; treating the first film with a first plasma to form a second film; treating the second film with a second plasma to form a third film; and selectively removing the first film, a portion of the second film, and the third film.
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公开(公告)号：US11626281B2
公开(公告)日：2023-04-11
申请号：US17025373
申请日：2020-09-18
Applicant: Applied Materials, Inc.
Inventor： Hanhong Chen , Philip A. Kraus , Joseph AuBuchon
IPC: H01L21/02 , C23C16/34 , C23C16/455
Abstract: A method of depositing nitride films is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing nitride films which utilizes separate reaction and nitridation plasmas. In some embodiments, the nitride films have improved growth per cycle (GPC) relative to films deposited by thermal processes or plasma processes with only a single plasma exposure. In some embodiments, the nitride films have improved film quality relative to films deposited by thermal processes or plasma processes with only a single plasma exposure.
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