The disclosure provides a resistance variable memory that can realize high integration. The resistance variable memory of the disclosure includes a plurality of transistors formed on a surface of a substrate, and a plurality of variable resistance elements stacked on the surface of the substrate in a vertical direction. One electrode of each of the variable resistance elements is commonly electrically connected to one electrode of one transistor, and another electrode of each of the variable resistance elements is respectively electrically connected to a bit line, and another electrode of each of the transistors is electrically connected to a source line, and each gate of transistors in a row direction is commonly connected to a word line.