Invention Grant
- Patent Title: Gate all around transistors with high charge mobility channel materials
-
Application No.: US16749897Application Date: 2020-01-22
-
Publication No.: US11222952B2Publication Date: 2022-01-11
- Inventor: Bin Yang , Haining Yang , Xia Li
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/16 ; H01L29/201 ; H01L29/66 ; H01L29/78 ; H01L29/43
Abstract:
A semiconductor device comprising an N-type metal oxide semiconductor (NMOS) gate-all-around (GAA) transistor and a P-type metal oxide semiconductor (PMOS) GAA transistor with high charge mobility channel materials is disclosed. The semiconductor device may include a substrate. The semiconductor device may also include an NMOS GAA transistor on the substrate, wherein the NMOS GAA transistor comprises a first channel material. The semiconductor device may further include a PMOS GAA transistor on the substrate, wherein the PMOS GAA transistor comprises a second channel material. The first channel material may have an electron mobility greater than an electron mobility of Silicon (Si) and the second channel material may have a hole mobility greater than a hole mobility of Si.
Public/Granted literature
- US20210226009A1 GATE ALL AROUND TRANSISTORS WITH HIGH CHARGE MOBILITY CHANNEL MATERIALS Public/Granted day:2021-07-22
Information query
IPC分类:
