Invention Grant
- Patent Title: Methods for depositing a hafnium lanthanum oxide film on a substrate by a cyclical deposition process in a reaction chamber
-
Application No.: US16790780Application Date: 2020-02-14
-
Publication No.: US11227763B2Publication Date: 2022-01-18
- Inventor: Tatiana Ivanova , Perttu Sippola , Michael Eugene Givens
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Laine IP Oy
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/51 ; H01L21/28
Abstract:
A method for depositing a hafnium lanthanum oxide film on a substrate by a cyclical deposition in a reaction chamber is disclosed. The method may include: depositing a hafnium oxide film on the substrate utilizing a first sub-cycle of the cyclical deposition process and depositing a lanthanum oxide film utilizing a second sub-cycle of the cyclical deposition process.
Public/Granted literature
Information query
IPC分类:
