Methods and systems for etching SiCN with mutli-color selectivity may include receiving the substrate having a multi-line layer formed thereon, the multi-line layer including a region having a pattern of alternating lines of a plurality of materials, wherein each line has a horizontal thickness, a vertical height, and extends horizontally across an underlying layer, wherein each line of the pattern of alternating lines extends vertically from a top surface of the multi-line layer to a bottom surface of the multi-line layer. Such a method may also include forming a patterned recess in the multi-line layer to expose at least a first component of the multi-line layer and a second component of the multi-line layer. An embodiment of a method many also include etching the first component with a non-corrosive etch process that is selective to the second component.