Invention Grant
- Patent Title: Bottom-up growth of silicon oxide and silicon nitride using sequential deposition-etch-treat processing
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Application No.: US16853689Application Date: 2020-04-20
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Publication No.: US11236418B2Publication Date: 2022-02-01
- Inventor: Rui Cheng , Abhijit Basu Mallick , Pramit Manna
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: - Servilla Whitney LLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/24 ; C23C16/04 ; C23C16/40 ; C23C16/34 ; C23C16/56 ; H01L21/762
Abstract:
Methods for gapfill of high aspect ratio features are described. A first film is deposited on the bottom and upper sidewalls of a feature. The first film is etched from the sidewalls of the feature and the first film in the bottom of the feature is treated to form a second film. The deposition, etch and treat processes are repeated to fill the feature.
Public/Granted literature
- US20200248303A1 Bottom-Up Growth of Silicon Oxide and Silicon Nitride Using Sequential Deposition-Etch-Treat Processing Public/Granted day:2020-08-06
Information query
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