- Patent Title: High stability gain structure and filter realization with less than 50 ppm/° c. temperature variation with ultra-low power consumption using switched-capacitor and sub-threshold biasing
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Application No.: US16829802Application Date: 2020-03-25
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Publication No.: US11239806B2Publication Date: 2022-02-01
- Inventor: Aatmesh Shrivastava
- Applicant: Northeastern University
- Applicant Address: US MA Boston
- Assignee: Northeastern University
- Current Assignee: Northeastern University
- Current Assignee Address: US MA Boston
- Agency: Foley Hoag LLP
- Agent Dana M. Gordon; Rajesh Vallabh
- Main IPC: H03F3/45
- IPC: H03F3/45 ; H03F3/00 ; H03F1/30
Abstract:
An ultra-low power sub-threshold gm stage is disclosed where transconductance is very stable with process, temperature, and voltage variations. This technique can be implemented in a differential amplifier with constant gain and a second order biquad filter with constant cut off frequency. The amplifier gain can achieve a small temperature coefficient of 48.6 ppm/° C. and exhibits small sigma of 75 mdB with process. The second order biquad can achieve temperature stability of 69 ppm/° C. and a voltage coefficient of only 49 ppm/mV.
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