• Patent Title: Method for producing polycrystalline silicon
  • Application No.: US16477814
    Application Date: 2017-12-28
  • Publication No.: US11242253B2
    Publication Date: 2022-02-08
  • Inventor: Yuichi Inoue
  • Applicant: TOKUYAMA CORPORATION
  • Applicant Address: JP Yamaguchi
  • Assignee: TOKUYAMA CORPORATION
  • Current Assignee: TOKUYAMA CORPORATION
  • Current Assignee Address: JP Yamaguchi
  • Agency: Casimir Jones, SC
  • Agent Robert A. Goetz
  • Priority: JPJP2017-005439 20170116
  • International Application: PCT/JP2017/047200 WO 20171228
  • International Announcement: WO2018/131500 WO 20180719
  • Main IPC: C01B33/03
  • IPC: C01B33/03
Method for producing polycrystalline silicon
Abstract:
Provided is a method which not only prevents (i) accumulation of fine silicon powder in a separation device and a pipe which are provided in steps after passage of a filter and (ii) damage to a pump, but also reduces adhesion of a silane oligomer to the filter. A method, in accordance with an embodiment of the present invention, for producing polycrystalline silicon, includes: a silicon deposition step; a separation step; and a fine powder removal step of removing the fine silicon powder by passing a chlorosilane condensate through a filter.
Information query
Patent Agency Ranking
0/0