Invention Grant
- Patent Title: Method for producing polycrystalline silicon
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Application No.: US16477814Application Date: 2017-12-28
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Publication No.: US11242253B2Publication Date: 2022-02-08
- Inventor: Yuichi Inoue
- Applicant: TOKUYAMA CORPORATION
- Applicant Address: JP Yamaguchi
- Assignee: TOKUYAMA CORPORATION
- Current Assignee: TOKUYAMA CORPORATION
- Current Assignee Address: JP Yamaguchi
- Agency: Casimir Jones, SC
- Agent Robert A. Goetz
- Priority: JPJP2017-005439 20170116
- International Application: PCT/JP2017/047200 WO 20171228
- International Announcement: WO2018/131500 WO 20180719
- Main IPC: C01B33/03
- IPC: C01B33/03

Abstract:
Provided is a method which not only prevents (i) accumulation of fine silicon powder in a separation device and a pipe which are provided in steps after passage of a filter and (ii) damage to a pump, but also reduces adhesion of a silane oligomer to the filter. A method, in accordance with an embodiment of the present invention, for producing polycrystalline silicon, includes: a silicon deposition step; a separation step; and a fine powder removal step of removing the fine silicon powder by passing a chlorosilane condensate through a filter.
Information query
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