Invention Grant
- Patent Title: Core wire for use in silicon deposition, method for producing said core wire, and method for producing polycrystalline silicon
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Application No.: US16484065Application Date: 2018-02-14
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Publication No.: US11254579B2Publication Date: 2022-02-22
- Inventor: Masayoshi Nishikawa , Yuji Inoue
- Applicant: TOKUYAMA CORPORATION
- Applicant Address: JP Yamaguchi
- Assignee: TOKUYAMA CORPORATION
- Current Assignee: TOKUYAMA CORPORATION
- Current Assignee Address: JP Yamaguchi
- Agency: Casimir Jones, SC
- Agent Robert A. Goetz
- Priority: JPJP2017-029470 20170220
- International Application: PCT/JP2018/005048 WO 20180214
- International Announcement: WO2018/151140 WO 20180823
- Main IPC: C30B29/06
- IPC: C30B29/06 ; C01B33/035 ; C23C16/24 ; C30B25/00

Abstract:
Efficiency of producing polycrystalline silicon is improved. A silicon filament (11) is constituted by a rod-shaped member made of polycrystalline silicon. The polycrystalline silicon has an interstitial oxygen concentration of not less than 10 ppma and not more than 40 ppma. On a side surface, in a lengthwise direction, of the rod-shaped member, crystal grains each having a crystal grain size of not less than 1 mm are observed.
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