- Patent Title: Chain scission resist compositions for EUV lithography applications
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Application No.: US16728976Application Date: 2019-12-27
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Publication No.: US11262654B2Publication Date: 2022-03-01
- Inventor: Lauren Doyle , Marie Krysak , Patrick Theofanis , James Blackwell , Eungnak Han
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Essential Patents Group, LLP
- Main IPC: G03F7/039
- IPC: G03F7/039 ; C08G83/00 ; C08F20/24 ; C08F30/08 ; G03F7/20
Abstract:
Chain scission resist compositions suitable for EUV lithography applications may include monomer functional groups that improve the kinetics and/or thermodynamics of the scission mechanism. Chain scission resists may include monomer functional groups that reduce the risk that leaving groups generated through the scission mechanism may chemically corrode processing equipment.
Public/Granted literature
- US20210200085A1 CHAIN SCISSION RESIST COMPOSITIONS FOR EUV LITHOGRAPHY APPLICATIONS Public/Granted day:2021-07-01
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