- Patent Title: Voltage-generating circuit and semiconductor device using the same
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Application No.: US16952873Application Date: 2020-11-19
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Publication No.: US11269365B2Publication Date: 2022-03-08
- Inventor: Hiroki Murakami
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JPJP2019-210096 20191121
- Main IPC: G05F1/46
- IPC: G05F1/46 ; G05F3/24 ; G05F1/567

Abstract:
The invention provides a voltage-generating circuit with a simple configuration capable of saving space and generating reliable voltage. The voltage-generating circuit of the invention includes a reference voltage-generating unit, a PTAT voltage-generating unit, a comparison unit, and a selection unit. The reference voltage-generating unit generates a reference voltage essentially without dependency on temperature. The PTAT voltage-generating unit generates a temperature-dependent voltage with a positive or negative dependency on temperature. The temperature-dependent voltage is equal to the reference voltage at a target temperature. The comparison unit compares the reference voltage with the temperature-dependent voltage. The selection unit selects and outputs either the reference voltage or the temperature-dependent voltage.
Public/Granted literature
- US20210157348A1 VOLTAGE-GENERATING CIRCUIT AND SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2021-05-27
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