Invention Grant
- Patent Title: Method of forming self-aligned via
-
Application No.: US17148982Application Date: 2021-01-14
-
Publication No.: US11270914B2Publication Date: 2022-03-08
- Inventor: Suketu Arun Parikh , Mihaela Balseanu
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/02 ; H01L23/522 ; H01L21/033
Abstract:
Electronic devices and methods to form electronic devices having a self-aligned via are described. An adhesion enhancement layer is utilized to promote adhesion between the conductive material and the sidewalls of the at least one via opening. The self-aligned vias decrease via resistance and reduce the potential to short to the wrong metal line.
Public/Granted literature
- US20210166973A1 Method Of Forming Self-Aligned Via Public/Granted day:2021-06-03
Information query
IPC分类:
