Invention Grant
- Patent Title: Linear mode avalanche photodiodes without excess noise
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Application No.: US17056309Application Date: 2018-07-11
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Publication No.: US11271130B2Publication Date: 2022-03-08
- Inventor: Winston K. Chan
- Applicant: SRI International
- Applicant Address: US CA Menlo Park
- Assignee: SRI International
- Current Assignee: SRI International
- Current Assignee Address: US CA Menlo Park
- Agency: Rutan & Tucker, LLP
- International Application: PCT/US2018/041574 WO 20180711
- International Announcement: WO2020/013815 WO 20200116
- Main IPC: G01J1/44
- IPC: G01J1/44 ; H01L31/107 ; H01L31/0304 ; H01L31/0352 ; G01S17/931 ; G01S7/481 ; H01L31/18

Abstract:
A linear mode avalanche photodiode senses light and outputs electrical current by being configured to, generate a gain equal to or greater than 1000 times amplification while generating an excess noise factor of less than 3 times a thermal noise present at or above a non-cryogenic temperature due to the gain from the amplification. The linear mode avalanche photodiode detects one or more photons in the light by using a superlattice structure that is matched to suppress impact ionization for a first carrier in the linear mode avalanche photodiode while at least one of 1) increasing impact ionization, 2) substantially maintaining impact ionization, and 3) suppressing impact ionization to a lesser degree for a second carrier. The first carrier having its impact ionization suppressed is either i) an electron or ii) a hole; and then, the second carrier is the electron or the hole.
Public/Granted literature
- US20210217918A1 LINEAR MODE AVALANCHE PHOTODIODES WITHOUT EXCESS NOISE Public/Granted day:2021-07-15
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