Invention Grant
- Patent Title: Scanning electron microscope and method for measuring pattern
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Application No.: US16941806Application Date: 2020-07-29
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Publication No.: US11276554B2Publication Date: 2022-03-15
- Inventor: Takeyoshi Ohashi , Yusuke Abe , Kenji Tanimoto , Kaori Bizen , Hyejin Kim
- Applicant: Hitachi High-Tech Corporation
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Tech Corporation
- Current Assignee: Hitachi High-Tech Corporation
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge, P.C.
- Priority: JPJP2019-145363 20190807
- Main IPC: H01J37/28
- IPC: H01J37/28 ; H01J37/244 ; H01J37/12

Abstract:
A scanning electron microscope includes an electron-optical system including an electron source and an objective lens, a stage on which a sample is placed, a secondary electron detector disposed adjacent to the electron source relative to the objective lens and configured to detect secondary electrons, a backscattered electron detector disposed between the objective lens and the stage and configured to detect backscattered electrons, a backscattered electron detection system controller configured to apply a voltage to the backscattered electron detector, and a device-control computer configured to detect a state of an electrical charge carried by the backscattered electron detector based on signal intensity at the secondary electron detector when the primary electrons are applied to the sample with a predetermined voltage applied to the backscattered electron detector.
Public/Granted literature
- US20210043420A1 SCANNING ELECTRON MICROSCOPE AND METHOD FOR MEASURING PATTERN Public/Granted day:2021-02-11
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