Invention Grant
- Patent Title: Resistive random access memory devices and methods for forming the same
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Application No.: US16683467Application Date: 2019-11-14
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Publication No.: US11289541B2Publication Date: 2022-03-29
- Inventor: Frederick Chen
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: Muncy, Geissler, Olds & Lowe, PC
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L45/00 ; H01L29/08 ; H01L29/10 ; H01L29/417 ; H01L29/78 ; H01L21/265 ; H01L21/306 ; H01L21/74 ; H01L29/66
Abstract:
A resistive random access memory (RRAM) device is provided. The RRAM device includes a gate structure on a substrate, and a source region and a drain region disposed on opposite sides of the gate structure on the substrate. The source region includes a semiconductor bulk, and the drain region includes a plurality of semiconductor fins adjacent to the semiconductor bulk, wherein the semiconductor fins are separated from each other by an isolation layer. The RRAM device further includes a plurality of RRAM units, wherein each of the RRAM units electrically contacts one of the semiconductor fins.
Public/Granted literature
- US20210151504A1 RESISTIVE RANDOM ACCESS MEMORY DEVICES AND METHODS FOR FORMING THE SAME Public/Granted day:2021-05-20
Information query
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