Embodiments of a memory finger structure and architecture for a three-dimensional memory device and fabrication method thereof are disclosed. The memory device includes an alternating layer stack disposed on a first substrate, the alternating layer stack including a plurality of conductor/dielectric layer pairs. The memory device further includes a first column of vertical memory strings extending through the alternating layer stack, and a first plurality of bitlines displaced along a first direction and extending along a second direction. The first column of vertical memory strings is disposed at a first angle relative to the second direction. Each of the first plurality of bitlines is connected to an individual vertical memory string in the first column.