Invention Grant
- Patent Title: Fabrication of electronic devices using sacrificial seed layers
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Application No.: US16968294Application Date: 2019-02-21
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Publication No.: US11302800B2Publication Date: 2022-04-12
- Inventor: Michael Everett Babb , Harlan Rusty Harris
- Applicant: The Texas A&M University System
- Applicant Address: US TX College Station
- Assignee: The Texas A&M University System
- Current Assignee: The Texas A&M University System
- Current Assignee Address: US TX College Station
- Agency: Winstead PC
- International Application: PCT/US2019/019039 WO 20190221
- International Announcement: WO2019/165137 WO 20190829
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/66
Abstract:
A method of making a semiconductor device includes depositing an amorphous layer on a substrate, masking a portion of the amorphous layer, removing a portion of the amorphous layer to form a first channel into the amorphous layer, depositing a semiconductor layer onto the substrate layer, and removing at least a portion of a defect region of the semiconductor layer to form a second channel.
Public/Granted literature
- US20210083076A1 FABRICATION OF ELECTRONIC DEVICES USING SACRIFICIAL SEED LAYERS Public/Granted day:2021-03-18
Information query
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