公开(公告)号：US20220223719A1

公开(公告)日：2022-07-14

申请号：US17710092

申请日：2022-03-31

Applicant: The Texas A&M University System

Inventor： Michael Everett Babb ,  Harlan Rusty Harris

IPC: H01L29/66 ,  H01L21/02

Abstract: A method of making a semiconductor device includes depositing an amorphous layer on a substrate, masking a portion of the amorphous layer, removing a portion of the amorphous layer to form a first channel into the amorphous layer, depositing a semiconductor layer onto the substrate layer, and removing at least a portion of a defect region of the semiconductor layer to form a second channel.

公开(公告)号：US11121211B2

公开(公告)日：2021-09-14

申请号：US16642283

申请日：2018-09-28

Applicant: The Texas A&M University System

Inventor： Michael Everett Babb ,  Harlan Rusty Harris

IPC: H01L29/06 ,  H01L21/02 ,  H01L21/285 ,  H01L21/306 ,  H01L21/308 ,  H01L29/20 ,  H01L29/45 ,  H01L29/66 ,  H01L29/861

Abstract: A lateral superjunction includes a substrate layer, a selective epitaxy layer deposited on the substrate layer, a trench formed into the selective epitaxy layer to expose a portion of the substrate layer, a first layer of semiconductor deposited in the trench, a second layer of semiconductor deposited adjacent to the first layer, and a first end layer of semiconductor deposited adjacent to the first layer of semiconductor and a second end layer of semiconductor deposited adjacent to the second layer of semiconductor.

公开(公告)号：US20210036103A1

公开(公告)日：2021-02-04

申请号：US16642283

申请日：2018-09-28

Applicant: The Texas A&M University System

Inventor： Michael Everett Babb ,  Harlan Rusty Harris

IPC: H01L29/06 ,  H01L21/02 ,  H01L21/306 ,  H01L21/308 ,  H01L21/285 ,  H01L29/66 ,  H01L29/20 ,  H01L29/45 ,  H01L29/861

Abstract: A lateral superjunction includes a substrate layer, a selective epitaxy layer deposited on the substrate layer, a trench formed into the selective epitaxy layer to expose a portion of the substrate layer, a first layer of semiconductor deposited in the trench, a second layer of semiconductor deposited adjacent to the first layer, and a first end layer of semiconductor deposited adjacent to the first layer of semiconductor and a second end layer of semiconductor deposited adjacent to the second layer of semiconductor.

公开(公告)号：US11799016B2

公开(公告)日：2023-10-24

申请号：US17710092

申请日：2022-03-31

Applicant: The Texas A&M University System

Inventor： Michael Everett Babb ,  Harlan Rusty Harris

IPC: H01L29/66 ,  H01L21/02

CPC classification number: H01L29/66757 ,  H01L21/02488 ,  H01L21/02532

Abstract: A method of making a semiconductor device includes depositing an amorphous layer on a substrate, masking a portion of the amorphous layer, removing a portion of the amorphous layer to form a first channel into the amorphous layer, depositing a semiconductor layer onto the substrate layer, and removing at least a portion of a defect region of the semiconductor layer to form a second channel.

公开(公告)号：US11302800B2

公开(公告)日：2022-04-12

申请号：US16968294

申请日：2019-02-21

Applicant: The Texas A&M University System

Inventor： Michael Everett Babb ,  Harlan Rusty Harris

IPC: H01L21/02 ,  H01L29/66

Abstract: A method of making a semiconductor device includes depositing an amorphous layer on a substrate, masking a portion of the amorphous layer, removing a portion of the amorphous layer to form a first channel into the amorphous layer, depositing a semiconductor layer onto the substrate layer, and removing at least a portion of a defect region of the semiconductor layer to form a second channel.

公开(公告)号：US20210376067A1

公开(公告)日：2021-12-02

申请号：US17400928

申请日：2021-08-12

Applicant: The Texas A&M University System

Inventor： Michael Everett Babb ,  Harlan Rusty Harris

IPC: H01L29/06 ,  H01L21/02 ,  H01L21/285 ,  H01L21/306 ,  H01L21/308 ,  H01L29/20 ,  H01L29/45 ,  H01L29/66 ,  H01L29/861

Abstract: A lateral superjunction includes a substrate layer, a selective epitaxy layer deposited on the substrate layer, a trench formed into the selective epitaxy layer to expose a portion of the substrate layer, a first layer of semiconductor deposited in the trench, a second layer of semiconductor deposited adjacent to the first layer, and a first end layer of semiconductor deposited adjacent to the first layer of semiconductor and a second end layer of semiconductor deposited adjacent to the second layer of semiconductor.

公开(公告)号：US20210083076A1

公开(公告)日：2021-03-18

申请号：US16968294

申请日：2019-02-21

Applicant: The Texas A&M University System

Inventor： Michael Everett Babb ,  Harlan Rusty Harris

IPC: H01L29/66 ,  H01L21/02

Abstract: A method of making a semiconductor device includes depositing an amorphous layer on a substrate, masking a portion of the amorphous layer, removing a portion of the amorphous layer to form a first channel into the amorphous layer, depositing a semiconductor layer onto the substrate layer, and removing at least a portion of a defect region of the semiconductor layer to form a second channel.