Invention Grant
- Patent Title: Non-volatile memory structure and manufacturing method thereof
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Application No.: US16822030Application Date: 2020-03-18
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Publication No.: US11309433B2Publication Date: 2022-04-19
- Inventor: Yi-Hui Chen , Chih-Hao Lin
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: JCIPRNET
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/66 ; H01L29/49 ; H01L21/764 ; H01L29/51
Abstract:
A non-volatile memory structure including a substrate, a plurality of charge storage layers, a first dielectric layer, and a control gate is provided. The charge storage layers are located on the substrate. An opening is provided between two adjacent charge storage layers. The first dielectric layer is located on the charge storage layers and on a surface of the opening. A bottom cross-sectional profile of the first dielectric layer located in the opening is a profile that is recessed on both sides. The control gate is located on the first dielectric layer and fills the opening.
Public/Granted literature
- US20210296486A1 NON-VOLATILE MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-09-23
Information query
IPC分类:
