A memory operation method applicable to a memory storage device is provided. The memory operation method including the following steps: receiving, from a memory controller, a first operation command for performing a first memory operation on a memory array of the memory storage device; and in response to the first operation command, transmitting first address information of the memory array corresponding to the first memory operation to the memory controller through a data interface of the memory storage device. In addition, a memory storage device using the memory operation method is also provided.