Invention Grant
- Patent Title: Deterioration detecting system and method for semiconductor process kits
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Application No.: US17030520Application Date: 2020-09-24
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Publication No.: US11320381B2Publication Date: 2022-05-03
- Inventor: Chyuan-Ruey Lin , Feng-Min Shen , Hung-Chia Su
- Applicant: TOP TECHNOLOGY PLATFORM CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TOP TECHNOLOGY PLATFORM CO., LTD.
- Current Assignee: TOP TECHNOLOGY PLATFORM CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW109125708 20200730
- Main IPC: G01N21/65
- IPC: G01N21/65 ; G01N21/95

Abstract:
A deterioration detecting system for semiconductor process kits has a Raman spectrometer, an optical detecting unit, a Raman spectra database unit, and a controlling-computing unit. The optical detecting unit and the controlling-computing unit are both coupled to the Raman spectrometer. The Raman spectrometer detects a semiconductor process kit under detection through the optical detecting unit to obtain a scatter light having an excited Raman spectrum signal. The Raman spectra database unit stores a plurality of Raman spectrum signals corresponding to multiple known use hours, multiple known materials, multiple known material compounds, or multiple known material deterioration state, of the semiconductor process kit under detection. The controlling-computing unit compares the excited Raman spectrum signal and a threshold of the Raman spectrum signals accessed from the Raman spectra database unit and outputs a judgment signal relating to the deterioration state of the semiconductor process kit under detection.
Public/Granted literature
- US20220034814A1 DETERIORATION DETECTING SYSTEM AND METHOD FOR SEMICONDUCTOR PROCESS KITS Public/Granted day:2022-02-03
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