公开(公告)号：US20240410756A1

公开(公告)日：2024-12-12

申请号：US18485756

申请日：2023-10-12

Applicant: TOP TECHNOLOGY PLATFORM CO., LTD.

Inventor： YU NIEN LU ,  FENG-MIN SHEN

IPC: G01J3/44 ,  G01N21/65

Abstract: A proposed Raman measurement device has a housing, an optical module, and a measuring probe. The measuring probe is connected to the optical module which is installed in the housing. A part of the measuring probe protrudes from the housing. An open end of the measuring probe outputs an emitted light from a laser light source in the optical module and receives the Raman scattered light excited from a surface to be detected. The axial centerline of the measuring probe and any parallel line in the length direction of the housing include an angle of 15° to 50° and the effective focusing distance between the open end of the measuring probe and the surface to be detected is 7 mm to 9 mm.

公开(公告)号：US11320381B2

公开(公告)日：2022-05-03

申请号：US17030520

申请日：2020-09-24

Applicant: TOP TECHNOLOGY PLATFORM CO., LTD.

Inventor： Chyuan-Ruey Lin ,  Feng-Min Shen ,  Hung-Chia Su

IPC: G01N21/65 ,  G01N21/95

Abstract: A deterioration detecting system for semiconductor process kits has a Raman spectrometer, an optical detecting unit, a Raman spectra database unit, and a controlling-computing unit. The optical detecting unit and the controlling-computing unit are both coupled to the Raman spectrometer. The Raman spectrometer detects a semiconductor process kit under detection through the optical detecting unit to obtain a scatter light having an excited Raman spectrum signal. The Raman spectra database unit stores a plurality of Raman spectrum signals corresponding to multiple known use hours, multiple known materials, multiple known material compounds, or multiple known material deterioration state, of the semiconductor process kit under detection. The controlling-computing unit compares the excited Raman spectrum signal and a threshold of the Raman spectrum signals accessed from the Raman spectra database unit and outputs a judgment signal relating to the deterioration state of the semiconductor process kit under detection.

公开(公告)号：US12055498B2

公开(公告)日：2024-08-06

申请号：US17361026

申请日：2021-06-28

Applicant: TOP TECHNOLOGY PLATFORM CO., LTD.

Inventor： Chyuan-Ruey Lin ,  Feng-Min Shen ,  Hung-Chia Su

IPC: G01N21/95 ,  G01N21/01 ,  G01N21/65 ,  G01N21/88 ,  G01N21/94 ,  G01N21/956 ,  G05B19/418 ,  G05B23/02 ,  H01L21/66

CPC classification number: G01N21/9501 ,  G01N21/658 ,  G01N21/8851 ,  G01N21/95607 ,  G01N21/01 ,  G01N21/65 ,  G01N21/8806 ,  G01N2021/8854 ,  G01N2021/8877 ,  G01N21/94 ,  G01N21/95 ,  G01N21/956 ,  G01N2021/95615 ,  G01N2201/126 ,  G05B19/41875 ,  G05B23/0283 ,  G05B2219/37507 ,  G05B2219/45031 ,  H01L22/30

Abstract: A data processing method for detection of deterioration of semiconductor process kits includes the following steps: acquiring a plurality of Raman spectra data of a semiconductor process kit and performing a plurality calculating processes on the Raman spectra data to obtain a first deterioration state determining parameter indicating the aging degree of the entire semiconductor process kit and a second deterioration state determining parameter indicating the degree of variation of the internal molecular structure of the semiconductor process kit.

公开(公告)号：US20220034814A1

公开(公告)日：2022-02-03

申请号：US17030520

申请日：2020-09-24

Applicant: TOP TECHNOLOGY PLATFORM CO., LTD.

Inventor： Chyuan-Ruey LIN ,  Feng-Min SHEN ,  Hung-Chia SU

IPC: G01N21/65 ,  G01N21/95

Abstract: A deterioration detecting system for semiconductor process kits has a Raman spectrometer, an optical detecting unit, a Raman spectra database unit, and a controlling-computing unit. The optical detecting unit and the controlling-computing unit are both coupled to the Raman spectrometer. The Raman spectrometer detects a semiconductor process kit under detection through the optical detecting unit to obtain a scatter light having an excited Raman spectrum signal. The Raman spectra database unit stores a plurality of Raman spectrum signals corresponding to multiple known use hours, multiple known materials, multiple known material compounds, or multiple known material deterioration state, of the semiconductor process kit under detection. The controlling-computing unit compares the excited Raman spectrum signal and a threshold of the Raman spectrum signals accessed from the Raman spectra database unit and outputs a judgment signal relating to the deterioration state of the semiconductor process kit under detection.

公开(公告)号：US20220283099A1

公开(公告)日：2022-09-08

申请号：US17361026

申请日：2021-06-28

Applicant: TOP TECHNOLOGY PLATFORM CO., LTD.

Inventor： Chyuan-Ruey LIN ,  Feng-Min SHEN ,  Hung-Chia SU

IPC: G01N21/95 ,  G01N21/65 ,  G01N21/956 ,  G01N21/88

Abstract: A data processing method for detection of deterioration of semiconductor process kits includes the following steps: acquiring a plurality of Raman spectra data of a semiconductor process kit and performing a plurality calculating processes on the Raman spectra data to obtain a first deterioration state determining parameter indicating the aging degree of the entire semiconductor process kit and a second deterioration state determining parameter indicating the degree of variation of the internal molecular structure of the semiconductor process kit.