Invention Grant
- Patent Title: Nitrogen-doped carbon hardmask films
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Application No.: US16853283Application Date: 2020-04-20
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Publication No.: US11322352B2Publication Date: 2022-05-03
- Inventor: Xiaoquan Min , Lu Xu , Prashant Kumar Kulshreshtha , Kwangduk Douglas Lee
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/02
Abstract:
Disclosed herein is a method and apparatus for forming carbon hard masks to improve deposition uniformity and etch selectivity. The carbon hard mask may be formed in a PECVD process chamber and is a nitrogen-doped carbon hardmask. The nitrogen-doped carbon hardmask is formed using a nitrogen containing gas, an argon containing gas, and a hydrocarbon gas.
Public/Granted literature
- US20210327713A1 NITROGEN-DOPED CARBON HARDMASK FILMS Public/Granted day:2021-10-21
Information query
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