Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US17022215Application Date: 2020-09-16
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Publication No.: US11322517B2Publication Date: 2022-05-03
- Inventor: Jin Ho Bin , Il Young Kwon , Il Do Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP&T Group LLP
- Priority: KR10-2018-0028817 20180312
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L29/10 ; H01L21/768 ; H01L27/11556
Abstract:
A semiconductor device includes a stack structure including conductive layers and insulating layers, which are alternately stacked; an opening including a first opening penetrating the stack structure and second openings protruding from the first opening; and a channel layer including channel regions located in the second openings and impurity regions located in the first opening, the impurity regions having an impurity concentration higher than that of the channel regions.
Information query
IPC分类:
