- Patent Title: Methods of determining corrections for a patterning process, device manufacturing method, control system for a lithographic apparatus and lithographic apparatus
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Application No.: US17102850Application Date: 2020-11-24
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Publication No.: US11327407B2Publication Date: 2022-05-10
- Inventor: Weitian Kou , Alexander Ypma , Marc Hauptmann , Michiel Kupers , Lydia Marianna Vergaij-Huizer , Erik Johannes Maria Wallerbos , Erik Henri Adriaan Delvigne , Willem Seine Christian Roelofs , Hakki Ergün Cekli , Stefan Cornelis Theodorus Van Der Sanden , Cédric Désiré Grouwstra , David Frans Simon Deckers , Manuel Giollo , Iryna Dovbush
- Applicant: ASML NETHERLANDS B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML NETHERLANDS B.V.
- Current Assignee: ASML NETHERLANDS B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Priority: EP16195047 20161021,EP17150658 20170109,EP17154129 20170201,EP17187411 20170823
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.
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