Invention Grant
- Patent Title: Optoelectronic semiconductor chip, method of manufacturing an optoelectronic component and optoelectronic component
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Application No.: US16762056Application Date: 2019-01-24
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Publication No.: US11329199B2Publication Date: 2022-05-10
- Inventor: Britta Göötz , Matthias Hien , Andreas Dobner , Peter Brick , Matthias Goldbach , Uli Hiller , Sebastian Stigler
- Applicant: OSRAM OLED GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM OLED GmbH
- Current Assignee: OSRAM OLED GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater Matsil, LLP
- Priority: DE102018101781.2 20180126,DE102018111637.3 20180515
- International Application: PCT/EP2019/051753 WO 20190124
- International Announcement: WO2019/145422 WO 20190801
- Main IPC: H01L33/50
- IPC: H01L33/50 ; H01L25/075 ; H01L33/60

Abstract:
An optoelectronic semiconductor chip, a method for manufacturing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence having an emission side, the emission side comprising a plurality of emission fields, partition walls on the emission side in a region between two adjacent emission fields and a conversion element on one or more emission fields, wherein the conversion element includes a matrix material with first phosphor particles incorporated therein, wherein the first phosphor particles are sedimented in the matrix material such that a mass fraction of the first phosphor particles is greater in a lower region of the conversion element facing the semiconductor layer sequence than in a remaining region of the conversion element, and wherein the partition walls are attached to the emission side without any additional connectors.
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