Invention Grant
- Patent Title: High frequency push-push oscillator
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Application No.: US16316198Application Date: 2017-07-10
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Publication No.: US11336228B2Publication Date: 2022-05-17
- Inventor: Bassem Fahs , Mona Hella
- Applicant: RENSSELAER POLYTECHNIC INSTITUTE
- Applicant Address: US NY Troy
- Assignee: RENSSELAER POLYTECHNIC INSTITUTE
- Current Assignee: RENSSELAER POLYTECHNIC INSTITUTE
- Current Assignee Address: US NY Troy
- Agency: Murtha Cullina LLP
- Agent Anthony P. Gangemi
- International Application: PCT/US2017/041322 WO 20170710
- International Announcement: WO2018/009925 WO 20180111
- Main IPC: H03B5/12
- IPC: H03B5/12 ; H03B5/18

Abstract:
A high frequency push-push oscillator is disclosed. The high frequency push-push oscillator includes a resonant circuit, including tank transmission lines or an inductor capacitor (LC) tank circuit, for generating a differential signal having a resonant frequency, and a Gm-core circuit for converting the differential signal to an output signal having an output frequency that is higher than the resonant frequency. The Gm-core circuit includes cross-coupled first and second transistors having first and second gates, drains, and sources, respectively, and first and second gate transmission lines. The first and second drains are in electrical communication with the resonant circuit. The first gate transmission line is joined with the first gate and the resonant circuit and the second gate transmission line is joined with the second gate and the resonant circuit. The Gm-core circuit includes a differential transmission line positioned between the first and second gates of the first and second transistors.
Public/Granted literature
- US20210281217A1 HIGH FREQUENCY PUSH-PUSH OSCILLATOR Public/Granted day:2021-09-09
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