Invention Grant
- Patent Title: Fabrication of Schottky barrier diode using lateral epitaxial overgrowth
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Application No.: US16016415Application Date: 2018-06-22
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Publication No.: US11342232B2Publication Date: 2022-05-24
- Inventor: Sansaptak Dasgupta , Marko Radosavljevic , Han Wui Then , Paul Fischer , Walid Hafez
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L21/8252
- IPC: H01L21/8252 ; H01L27/06 ; H01L27/02 ; H01L29/872 ; H01L21/02 ; H01L29/778
Abstract:
A diode is disclosed. The diode includes a semiconductor substrate, a hard mask formed above the substrate, vertically oriented components of a first material adjacent sides of the hard mask, and laterally oriented components of the first material on top of the hard mask. The laterally oriented components are oriented in a first direction and a second direction. The diode also includes a second material on top of the first material. The second material forms a Schottky barrier.
Public/Granted literature
- US20190393092A1 FABRICATION OF SCHOTTKY BARRIER DIODE USING LATERAL EPITAXIAL OVERGROWTH Public/Granted day:2019-12-26
Information query
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