Invention Grant
- Patent Title: Vertical field effect transistors with self aligned contacts
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Application No.: US16141315Application Date: 2018-09-25
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Publication No.: US11355644B2Publication Date: 2022-06-07
- Inventor: Yi Song , Juntao Li , Kangguo Cheng
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Samuel Waldbaum
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/06 ; H01L29/423 ; H01L29/51 ; H01L29/66 ; H01L21/308 ; H01L21/762 ; H01L21/768

Abstract:
A method of forming a semiconductor device is provided that includes forming a first source/drain region in a supporting substrate abutting a fin structure; and forming an isolation region in the supporting substrate adjacent to a first side of the fin structure, wherein the first source/drain region is positioned on an opposing second side of the fin structure. A gate structure is formed on the channel region portion of the fin structure. In a following step, a second source/drain region on an upper surface of the fin structure. Contacts can be formed aligned to the first source/drain region and the gate structure.
Public/Granted literature
- US20200098929A1 VERTICAL FIELD EFFECT TRANSISTORS WITH SELF ALIGNED CONTACTS Public/Granted day:2020-03-26
Information query
IPC分类: