Invention Grant
- Patent Title: High-side gate driver
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Application No.: US16819713Application Date: 2020-03-16
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Publication No.: US11368149B2Publication Date: 2022-06-21
- Inventor: Hiroki Niikura
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Cantor Colburn LLP
- Priority: JPJP2019-048785 20190315
- Main IPC: H03K17/082
- IPC: H03K17/082 ; H02P27/06 ; H02M3/335 ; H02M1/08 ; H02M3/158

Abstract:
A selection circuit generates a voltage VS of a switching terminal VS or a power supply voltage VCC, whichever is higher, in a common line. A regulator stabilizes a voltage VCOML of a reference line at a level lower than a voltage VCOM of the common line by a predetermined voltage difference ΔV. A charge pump circuit is provided between the common line and the reference line and steps up a voltage difference ΔV between the common line and the reference line. A rectifying element charges a bootstrap capacitor between a bootstrap terminal and the switching terminal, with an output voltage of the charge pump circuit.
Public/Granted literature
- US20200295745A1 HIGH-SIDE GATE DRIVER Public/Granted day:2020-09-17
Information query
IPC分类: