- Patent Title: Low dark current radiation detector and method of making the same
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Application No.: US17064089Application Date: 2020-10-06
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Publication No.: US11378701B2Publication Date: 2022-07-05
- Inventor: Saeid Taherion , Michael K. Jackson
- Applicant: REDLEN TECHNOLOGIES, INC.
- Applicant Address: CA Saanichton
- Assignee: REDLEN TECHNOLOGIES, INC.
- Current Assignee: REDLEN TECHNOLOGIES, INC.
- Current Assignee Address: CA Saanichton
- Agency: The Marbury Law Group PLLC
- Main IPC: G01T1/24
- IPC: G01T1/24 ; H01L27/146 ; H01L31/09 ; G01T1/17
Abstract:
A radiation sensor includes a radiation-sensitive semiconductor layer, a cathode electrode disposed over a front side of the radiation-sensitive semiconductor layer that is configured to be exposed to radiation, at least one anode electrode disposed over a backside of the radiation-sensitive semiconductor layer, and a potential barrier layer located between the cathode electrode and the front side of the radiation-sensitive semiconductor layer.
Public/Granted literature
- US20220107431A1 LOW DARK CURRENT RADIATION DETECTOR AND METHOD OF MAKING THE SAME Public/Granted day:2022-04-07
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