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1.
公开(公告)号:US20250164652A1
公开(公告)日:2025-05-22
申请号:US18943129
申请日:2024-11-11
Applicant: REDLEN TECHNOLOGIES, INC.
Inventor: Eric KYFIUK , Michael AYUKAWA , Bernard HARRIS , Krzysztof INIEWSKI
Abstract: A detector structure includes a supporting substrate having an opening therethrough that is laterally surrounded on all sides by the supporting substrate, a carrier board located over a front side of the supporting substrate, the carrier board including interconnect structures electrically extending between the front side and a back side of the carrier board; at least one SIC located over the carrier board, the at least one ASIC including signal processing channel circuitry, at least one radiation sensor located over a front side of the at least one ASIC, and a connector located within the opening in the supporting substrate, the connector is electrically coupled to the interconnect structures on the back side of the carrier board. Further embodiments include detector modules including a plurality of above-described detector structures, a module circuit board coupled to the connectors by cables, and a heat sink.
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2.
公开(公告)号:US20250035798A1
公开(公告)日:2025-01-30
申请号:US18914522
申请日:2024-10-14
Applicant: REDLEN TECHNOLOGIES, INC.
Inventor: Thomas TIEDJE , Hao YUAN , Michael K. JACKSON
IPC: G01T1/24 , H01L27/146
Abstract: A radiation detector includes a radiation-sensitive semiconductor substrate, a cathode electrode disposed over a first surface of the radiation-sensitive semiconductor material substrate, and at least one anode electrode disposed over a second surface of the radiation-sensitive semiconductor material substrate, where the at least one anode electrode includes a semiconductor material layer including cadmium sulfide located between a metallic material and the semiconductor material substrate. In one embodiment, the radiation-sensitive semiconductor substrate includes cadmium zinc telluride (CZT), and the semiconductor material layer includes Cd1-xZnxTeyS1-y, where 0≤x≤0.5 and 0≤y≤0.5. Further embodiments include methods of fabricating a radiation detector that include exposing a surface of a radiation-sensitive semiconductor material substrate to a gas containing hydrogen sulfide at an elevated temperature to form a sulfide-containing semiconductor material layer.
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公开(公告)号:US12046623B2
公开(公告)日:2024-07-23
申请号:US17395794
申请日:2021-08-06
Applicant: REDLEN TECHNOLOGIES, INC.
Inventor: Francis Joseph Kumar , Michael K. Jackson , Pramodha Marthandam
IPC: H01L31/00 , A61B6/03 , H01L27/146
CPC classification number: H01L27/14659 , A61B6/032 , H01L27/14696 , H01L27/14698
Abstract: A radiation detector tile includes a single crystal compound semiconductor tile having a zinc blende crystal structure, a (111) plane first major (i.e. prominent) surface and four side surfaces which are rotated by an angle of 13° to 17° to a {110} family of planes. The tile may be formed by dicing a (111) oriented wafer at directions which are rotated by an angle of 13° to 17° from in-plane slipping directions to reduce or eliminate the side surface chipping and sub surface dislocation defects.
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4.
公开(公告)号:US20230280486A1
公开(公告)日:2023-09-07
申请号:US18170290
申请日:2023-02-16
Applicant: REDLEN TECHNOLOGIES, INC.
Inventor: Xavier DEFAY , Michael K. JACKSON , Krzysztof INIEWSKI
Abstract: Various embodiments include methods of compensating for signal loss due to depth-of-interaction (DOI) effects in radiation detectors, thereby improving detector efficiency. Various embodiments may include detecting the amplitude of a primary charge signal in a first pixel of an array of detector pixels in response to a photon interaction event, detecting the amplitude of a secondary charge signal in a second pixel of the array, where the amplitude of the secondary charge signal has an opposite polarity than the polarity of the primary charge signal, and generating a corrected photon energy measurement of the photon interaction event by applying a correction to the detected amplitude of the primary charge signal based on the detected amplitude of the secondary charge signal. Further embodiments include methods of improving detector efficiency by compensating for both depth-of-interaction (DOI) and charge sharing effects.
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公开(公告)号:US11156568B2
公开(公告)日:2021-10-26
申请号:US16844484
申请日:2020-04-09
Applicant: REDLEN TECHNOLOGIES, INC.
Inventor: Krzysztof Iniewski , Michael Ayukawa , Conny Hansson
IPC: G01N23/20008 , G01N23/207
Abstract: Various aspects include methods and devices for reducing the scanning time for an X-ray diffraction scanner system by increasing the count rate or efficiency of the energy discriminating X-ray detector. In a first embodiment, the count rate of the energy discriminating X-ray detector is increased by increasing the number of detectors counting X-ray scatter photon in particular energy bins by configuring individual pixel detectors within a 2-D X-ray detector array to count photons within specific energy bins. In a second embodiment, the gain of amplifier components in the detector processing circuitry is increased in order to increase the energy resolution of the detector. In a third embodiment, the individual pixel detectors within a 2-D X-ray detector array are configured to count photons within specific energy bins and the gain of amplifier components in the detector processing circuitry is increased in order to increase the energy resolution of the detector.
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公开(公告)号:US20250102689A1
公开(公告)日:2025-03-27
申请号:US18819380
申请日:2024-08-29
Applicant: RedLen Technologies, Inc.
Inventor: Michael K. JACKSON , Krzysztof INIEWSKI
Abstract: Detector structures including at least one radiation sensor including an array of pixel detectors, an application specific integrated circuit (ASIC) including a plurality of signal processing channel circuits electrically coupled to respective pixel detectors of the array of pixel detectors, each signal processing channel circuit generating photon count data for multiple energy bins for a respective pixel detector, and at least one compensation circuit that receives photon count data for multiple energy bins from one or more signal processing channel circuits and adjusts a response characteristic of at least one signal processing channel circuit of the ASIC based on the received photon count data. The adjustments to the response characteristic of at least one signal processing channel circuit may include adjusting energy thresholds and/or providing a compensation current to compensate for spectral shift and improve count stability.
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7.
公开(公告)号:US20240219589A1
公开(公告)日:2024-07-04
申请号:US18602887
申请日:2024-03-12
Applicant: REDLEN TECHNOLOGIES, INC.
Inventor: Michael AYUKAWA , Bernard HARRIS , Krzysztof INIEWSKI
IPC: G01T1/24 , A61B6/42 , H01L27/146 , H05B3/22
CPC classification number: G01T1/244 , A61B6/4233 , A61B6/4266 , H01L27/14634 , H01L27/1469 , H05B3/22
Abstract: Direct attach radiation detector structures include an application specific integrated circuit (ASIC), at least one radiation sensor located over a front surface of the ASIC, and a carrier board located over a back surface of the ASIC. In various embodiments, the carrier board may include one or more thermal management features that may reduce temperature non-uniformities in the detector structure. In additional embodiments, the carrier board may include one or more features to improve the manufacturability of the radiation detector unit.
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公开(公告)号:US11953452B2
公开(公告)日:2024-04-09
申请号:US17562288
申请日:2021-12-27
Applicant: REDLEN TECHNOLOGIES, INC.
Inventor: Pramodha Marthandam , Michael Kevin Jackson
CPC classification number: G01N23/046 , A61B6/032 , A61B6/035 , A61B6/4233 , A61B6/4241 , G01T1/17 , G01T1/241 , G01N2223/501
Abstract: An ionizing radiation detector, such as a photon counting computed tomography detector, includes a semiconductor material plate, a plurality of anodes located on a first side of the semiconductor material plate, where the gaps (i.e., streets) between adjacent anodes are less than 15 μm in width, and at least one cathode located on a second side of the semiconductor material plate. Ionizing radiation detectors according to various embodiments may have improved count rate stability (CRS) characteristics and a reduced number of Non-Conforming Pixels (NCPs) relative to conventional detectors.
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公开(公告)号:US11474050B2
公开(公告)日:2022-10-18
申请号:US17193219
申请日:2021-03-05
Applicant: REDLEN TECHNOLOGIES, INC.
Inventor: Christopher Read , Keira Flanagan , Michael Ayukawa , Jeffrey Allan Walton
IPC: G01N23/046 , G01N23/083
Abstract: A radiation detector module includes a frame, a module circuit board connected to the frame, detector units that each include radiation sensors disposed above the frame and electrically connected to the module circuit board, and an optically and infrared radiation opaque, X-ray transparent, electrically insulating detector shield covering a top surface and at least one side surface of the radiation sensors.
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10.
公开(公告)号:US20210022695A1
公开(公告)日:2021-01-28
申请号:US16931800
申请日:2020-07-17
Applicant: REDLEN TECHNOLOGIES, INC.
Inventor: Krzysztof INIEWSKI , Elmaddin GULIYEV , Conny HANSSON
Abstract: Various aspects include methods for compensating for the effects of charge sharing among pixelate detectors in X-ray detectors by applying a correspondence factor to counts of X-ray photons in energy bins to estimate incident X-ray photon energy bins. The correspondence factor may be determined by determining an incident X-ray photon energy spectrum, adjusting the incident X-ray photon energy spectrum to account for an energy resolution of the pixelated detector, generating a charge sharing model for the adjusted incident X-ray photon energy spectrum based on a percentage charge sharing parameter of the pixelated detector, applying the charge sharing model to energy bins of the pixelated detector to estimate counts in each of the energy bins, and determining the correspondence factor by comparing the estimated counts in each of the energy bins to counts in the energy bins that would be expected for the adjusting the incident X-ray photon energy spectrum.
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