Invention Grant
- Patent Title: Integrated circuit device and method of manufacturing the same
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Application No.: US16936888Application Date: 2020-07-23
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Publication No.: US11380706B2Publication Date: 2022-07-05
- Inventor: Sangyong Park , Hyunseok Na , Jaeduk Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2019-0096921 20190808
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11556 ; H01L27/11565 ; H01L27/11519

Abstract:
An integrated circuit device includes a plurality of conductive lines extending in a horizontal direction parallel to a main surface of a substrate and overlapping one another in a vertical direction vertical to the main surface, on the substrate, a plurality of insulation layers each between two adjacent conductive lines of the plurality of conductive lines to extend in the horizontal direction, a channel layer extending in the vertical direction in a channel hole passing through the plurality of conductive lines and the plurality of insulation layers, and a plurality of outer blocking dielectric layers between the plurality of conductive lines and the channel layer, in at least some of the plurality of conductive lines, wherein a width of each of the plurality of outer blocking dielectric layers in the horizontal direction increases toward the main surface.
Public/Granted literature
- US20210043649A1 INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-02-11
Information query
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