Invention Grant
- Patent Title: Treatments to enhance material structures
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Application No.: US16951858Application Date: 2020-11-18
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Publication No.: US11417517B2Publication Date: 2022-08-16
- Inventor: Srinivas Gandikota , Yixiong Yang , Jacqueline Samantha Wrench , Yong Yang , Steven C. H. Hung
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/28 ; H01L21/67
Abstract:
A method of forming a high-K dielectric cap layer on a semiconductor structure formed on a substrate includes depositing the high-K dielectric cap layer on the semiconductor structure, depositing a sacrificial silicon cap layer on the high-K dielectric cap layer, performing a post cap anneal process to harden and densify the as-deposited high-K dielectric cap layer, and removing the sacrificial silicon cap layer.
Public/Granted literature
- US20210111020A1 TREATMENTS TO ENHANCE MATERIAL STRUCTURES Public/Granted day:2021-04-15
Information query
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