Invention Grant
- Patent Title: P-type oxide semiconductor and method for manufacturing same
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Application No.: US16313272Application Date: 2017-06-30
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Publication No.: US11424320B2Publication Date: 2022-08-23
- Inventor: Shizuo Fujita , Kentaro Kaneko , Toshimi Hitora , Tomochika Tanikawa
- Applicant: FLOSFIA INC. , KYOTO UNIVERSITY
- Applicant Address: JP Kyoto; JP Kyoto
- Assignee: FLOSFIA INC.,KYOTO UNIVERSITY
- Current Assignee: FLOSFIA INC.,KYOTO UNIVERSITY
- Current Assignee Address: JP Kyoto; JP Kyoto
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JPJP2016-131156 20160630
- International Application: PCT/JP2017/024275 WO 20170630
- International Announcement: WO2018/004009 WO 20180104
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/06 ; H01L29/47 ; H01L29/778 ; H01L29/78 ; H01L29/808 ; H01L29/812 ; H01L29/872 ; H01L33/02 ; H01L29/24 ; H01L29/739 ; H01L29/12 ; H02M3/28 ; H01L33/26
Abstract:
A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.
Public/Granted literature
- US20190157380A1 P-TYPE OXIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING SAME Public/Granted day:2019-05-23
Information query
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