Invention Grant
- Patent Title: Epitaxial III-N nanoribbon structures for device fabrication
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Application No.: US16642833Application Date: 2017-09-27
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Publication No.: US11437255B2Publication Date: 2022-09-06
- Inventor: Sansaptak Dasgupta , Marko Radosavljevic , Han Wui Then , Paul Fischer , Kevin Lin
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Essential Patents Group, LLP
- International Application: PCT/US2017/053584 WO 20170927
- International Announcement: WO2019/066789 WO 20190404
- Main IPC: H01L21/673
- IPC: H01L21/673 ; H01L21/02
Abstract:
A structure, comprising an island comprising a III-N material. The island extends over a substrate and has a sloped sidewall. A cap comprising a III-N material extends laterally from a top surface and overhangs the sidewall of the island. A device, such as a transistor, light emitting diode, or resonator, may be formed within, or over, the cap.
Public/Granted literature
- US20200350184A1 EPITAXIAL III-N NANORIBBON STRUCTURES FOR DEVICE FABRICATION Public/Granted day:2020-11-05
Information query
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