Invention Grant
- Patent Title: Light-emitting device
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Application No.: US17138335Application Date: 2020-12-30
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Publication No.: US11437430B2Publication Date: 2022-09-06
- Inventor: Chao-Hsing Chen , Chi-Shiang Hsu , Yong-Yang Chen
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Ditthavong, Steiner & Mlotkowski
- Priority: TW108148664 20191231
- Main IPC: H01L27/15
- IPC: H01L27/15

Abstract:
A light-emitting device includes a substrate with light-emitting units. The light-emitting units include a first light-emitting unit, a second light-emitting unit, and one or more of third light-emitting units. Each of the light-emitting units includes a first semiconductor layer, an active layer and a second semiconductor layer. An insulating layer includes a first insulating layer opening and a second insulating layer opening formed on each of the light-emitting units. A first extension electrode covers the first light-emitting unit and the first extension electrode covers the first insulating layer opening on the first light-emitting unit. A second extension electrode covers the second light-emitting unit and the second extension electrode covers the second insulating layer opening on the second light-emitting unit. First and second electrode pads cover different parts of the light-emitting units.
Public/Granted literature
- US20210202571A1 LIGHT-EMITTING DEVICE Public/Granted day:2021-07-01
Information query
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