Invention Grant
- Patent Title: Pattern formation method, lithography apparatus, lithography system, and article manufacturing method
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Application No.: US16898739Application Date: 2020-06-11
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Publication No.: US11460768B2Publication Date: 2022-10-04
- Inventor: Hiroshi Sato
- Applicant: CANON KABUSHIKI KAISHA
- Applicant Address: JP Tokyo
- Assignee: CANON KABUSHIKI KAISHA
- Current Assignee: CANON KABUSHIKI KAISHA
- Current Assignee Address: JP Tokyo
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JPJP2013-139260 20130702,JPJP2014-111668 20140529
- Main IPC: G03F7/20
- IPC: G03F7/20 ; H01L21/027 ; G03F7/00 ; G03F9/00 ; B05D3/06 ; B05D3/12

Abstract:
A pattern forming method includes: a first step of forming a first pattern to define a first shot arrangement; and a second step of performing an imprint process, thereby forming a second pattern on the imprint material on the first pattern and defining a second shot arrangement. In the second step, the second shot arrangement is defined so as to reduce an overlay error between the first and second shot arrangements by deforming the mold. In the first step, based on information of the estimated second shot arrangement definable on the substrate when the second step is performed after the second pattern formed on the mold is amended by deforming the mold, the first pattern is formed to make an overlay error between the first and second shot arrangements fall within an allowable range.
Public/Granted literature
- US20200301271A1 PATTERN FORMATION METHOD, LITHOGRAPHY APPARATUS, LITHOGRAPHY SYSTEM, AND ARTICLE MANUFACTURING METHOD Public/Granted day:2020-09-24
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